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  Datasheet File OCR Text:
 SMD Type
NPN Silicon Epitaxia 2SC4178
Transistors IC
Features
Micro package. High gain bandwidth product. Low output capacitance.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 4 20 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current DC current gain * Collector-emitter saturation voltage * Gain bandwidth product Output capacitance Collector to base time constant Noise figure Symbol ICBO hFE Testconditons VCB = 30V, IE=0 VCE = 6V , IC = 1.0mA 40 90 0.1 400 600 1.0 12 3 Min Typ Max 100 180 0.3 V MHz pF ps dB Unit nA
VCE(sat) IC = 10mA , IB = 1.0mA fT Cob VCE = 6V , IE = -1.0mA VCE = 6V , IE = 0, f = 1MHz
Cc'rb'b VCE = 6V , IE = -1.0mA , f = 31.9MHz NF VCE = 6V , IE = -1.0mA , Rg = 50U, f = 100MHz
hFE Classification
Marking hFE F12 40 80 F13 60 120 F14 90 180
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